Claudio Vinegoni, Ph.D. | Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices

J. Lumines.
Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices

Giorgis^#, F., Pirri, C. F., Vinegoni, C., and Pavesi, L.

Journal of Luminescence 1998

ABS URL DOI CITE HTML PDF

Optical and photoluminescence characterizations were performed on nanometric multilayer structures based on amorphous silicon nitrogen alloys. Evidences are shown that the radiative efficiency of multilayers increases with respect to single-layer structures. This is ascribed to a strong electron-hole pair localization and a low heterointerfaces defect density. Time-resolved photoluminescence measurements yield fast recombination with an energy-dependent lifetime due to hopping processes. Finally, the performance of an electroluminescent device based on multilayers is presented. (C) 1999 Elsevier Science B.V. All rights reserved.
@article{1998-JL, author= {Giorgis<sup>#</sup>, F. and Pirri, C. F. and Vinegoni, C. and Pavesi, L.}, title= {Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices}, journal= {Journal of Luminescence}, alternatejournal = {J. Lumines.}, year = {1998}, volume = {80}, number = {1-4}, pages = {423-427}, issn = {0022-2313}, doi = {10.1016/s0022-2313(98)00141-0}, }
10.1016/s0022-2313(98)00141-0

Abstract

"Optical and photoluminescence characterizations were performed on nanometric multilayer structures based on amorphous silicon nitrogen alloys. Evidences are shown that the radiative efficiency of multilayers increases with respect to single-layer structures. This is ascribed to a strong electron-hole pair localization and a low heterointerfaces defect density. Time-resolved photoluminescence measurements yield fast recombination with an energy-dependent lifetime due to hopping processes. Finally, the performance of an electroluminescent device based on multilayers is presented. (C) 1999 Elsevier Science B.V. All rights reserved."

Full citation

For attribution in academic contexts, please cite this work as:

Giorgis^#, F., Pirri, C. F., Vinegoni, C., & Pavesi, L. (1998). Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices. Journal of Luminescence, 80(1-4), 423–427. https://doi.org/10.1016/s0022-2313(98)00141-0