Claudio Vinegoni, Ph.D. | Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers

Phys. Rev. B
Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers

Giorgis^#, F., Pirri, C. F., Vinegoni, C., and Pavesi, L.

Physical Review B 1999

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Radiative recombinations in amorphous Si1-xNx:H-based nanometric multilayer structures have been studied by stationary and time-resolved photoluminescence measurements at room temperature. Such structures show higher photoluminescence efficiency than reference bulk amorphous silicon nitride films. The enhancement is attributed to the localization of electron-hole Fairs induced by the multilayer structure. Fast monomolecular recombination processes are shown, with lifetimes dependent on the emission energy. Analysis of photoluminescence and absorption spectra shows a low density of defects and no intermixing at the multilayer heterointerfaces. Such features open the potential for the investigated structures to function as fast optoelectronic devices. [S0163-1829(99)13635-X].
@article{1999-PRB, author= {Giorgis<sup>#</sup>, F. and Pirri, C. F. and Vinegoni, C. and Pavesi, L.}, title= {Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers}, journal= {Physical Review B}, alternatejournal = {Phys. Rev. B}, year = {1999}, volume = {60}, number = {16}, pages = {11572-11576}, issn = {2469-9950}, doi = {10.1103/PhysRevB.60.11572}, }
10.1103/PhysRevB.60.11572

Abstract

"Radiative recombinations in amorphous Si1-xNx:H-based nanometric multilayer structures have been studied by stationary and time-resolved photoluminescence measurements at room temperature. Such structures show higher photoluminescence efficiency than reference bulk amorphous silicon nitride films. The enhancement is attributed to the localization of electron-hole Fairs induced by the multilayer structure. Fast monomolecular recombination processes are shown, with lifetimes dependent on the emission energy. Analysis of photoluminescence and absorption spectra shows a low density of defects and no intermixing at the multilayer heterointerfaces. Such features open the potential for the investigated structures to function as fast optoelectronic devices. [S0163-1829(99)13635-X]."

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Giorgis^#, F., Pirri, C. F., Vinegoni, C., & Pavesi, L. (1999). Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers. Physical Review B, 60(16), 11572–11576. https://doi.org/10.1103/PhysRevB.60.11572